X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis of surfactant affected FePt spintronic filmsCHUN FENG; XUJING LI; GUANGHUA YU et al.Applied surface science. 2014, Vol 308, pp 408-413, issn 0169-4332, 6 p.Article

Equipment maintenance focus in defect density improvements IBM microelectronics, burlington, vermontBILODEAU, Matthew P; DELIBAC, W. David.IEEE / SEMI advanced semiconductor manufacturing conference. 2004, pp 22-26, isbn 0-7803-8312-5, 1Vol, 5 p.Conference Paper

The impact of the nanoscale on computing systemsGOLDSTEIN, Seth Copen.IEEE/ACM International Conference on Computer-Aided Design. 2005, pp 655-661, isbn 0-7803-9254-X, 1Vol, 7 p.Conference Paper

Propagation of plane waves of a defect field in a viscoplastic medium in the presence of an interface between two mediaCHERTOVA, N. V; CHERNYAEV, Yu. V.Journal of applied mechanics and technical physics. 2004, Vol 45, Num 1, pp 96-104, issn 0021-8944, 9 p.Article

The emerging picture of ferromagnetism in the divalent hexaboridesFISK, Z; OTT, H. R; BARZYKIN, V et al.Physica. B, Condensed matter. 2002, Vol 312-13, pp 808-810, issn 0921-4526Conference Paper

Random Yield Prediction Based on a Stochastic Layout Sensitivity ModelGHAIDA, Rani S; DONIGER, Ken; ZARKESH-HA, Payman et al.IEEE transactions on semiconductor manufacturing. 2009, Vol 22, Num 3, pp 329-337, issn 0894-6507, 9 p.Article

Impact of particles in ultra pure water on random yield loss in IC productionWALI, Faisal; KNOTTER, D. Martin; MUD, Auke et al.Microelectronic engineering. 2009, Vol 86, Num 2, pp 140-144, issn 0167-9317, 5 p.Conference Paper

Characterization of defect density created by stress in the gate to drain overlap region using GIDL current model in n-channel MOSFETMAOUHOUB, N; RAIS, K.Journal of computational electronics (Print). 2011, Vol 10, Num 1-2, pp 141-143, issn 1569-8025, 3 p.Article

A Novel Wafer-Yield PDF Model and Verification With 90-180-nm SOC Chips : Maximizing operational efficiencies at the leading edgeMASUDA, Hiroo; TSUNOZAKI, Manabu; TSUTSUI, Toshikazu et al.IEEE transactions on semiconductor manufacturing. 2008, Vol 21, Num 4, pp 585-591, issn 0894-6507, 7 p.Conference Paper

Lois d'héritage des défauts et de leurs densités dans les cristaux pour des déformations homogènes grandesSTREL'TSOV, V. A.Fizika tverdogo tela. 1985, Vol 27, Num 12, pp 3713-3715, issn 0367-3294Article

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation EnergiesCANCADO, L. G; JORIO, A; MARTINS FERREIRA, E. H et al.Nano letters (Print). 2011, Vol 11, Num 8, pp 3190-3196, issn 1530-6984, 7 p.Article

The simplest quantum model supporting the kibble-zurek mechanism of topological defect production : Landau-Zener transitions from a new perspectiveDAMSKI, Bogdan.Physical review letters. 2005, Vol 95, Num 3, pp 035701.1-035701.4, issn 0031-9007Article

SEMATECH Mask ProgramYUN, Henry; RASTEGAR, Abbas; KEARNEY, Patrick et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7470, issn 0277-786X, isbn 978-0-8194-7770-5 0-8194-7770-2, 1Vol, 747005.1-747005.4Conference Paper

Effect of ramping anneals under inert or oxidizing ambient on the formation of oxygen precipitate denuded zone in nitrogen-doped Czochralski silicon wafersXIANGYANG MA; DAXI TIAN; LONGFEI GONG et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 8, pp 1934-1939, issn 1862-6300, 6 p.Article

CAEN-BIST : Testing the nanofabricBROWN, Jason G; BLANTON, R. D.International Test Conference. 2004, pp 462-471, isbn 0-7803-8580-2, 1Vol, 10 p.Conference Paper

Ab-initio statistical mechanics for ordered compounds: single-defect theory vs. cluster-expansion techniquesDRAUTZ, R; SCHULTZ, I; LECHERMANN, F et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 1, pp 37-44, issn 0370-1972, 8 p.Article

60 Seconds Puddle time-a tradition to overcome in CA resists : Process optimization and defect eliminationSHALOM, Eitan; ZEID, Shaike.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69233W.1-69233W.10, issn 0277-786X, isbn 978-0-8194-7108-6Conference Paper

The engineering of intrinsic point defects in silicon wafers and crystalsFALSTER, R; VORONKOV, V. V.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 73, Num 1-3, pp 87-94, issn 0921-5107Conference Paper

Key influence of the thermal history on process-induced defects in Czochralski silicon wafersKISSINGER, G; GRÄF, D; LAMBERT, U et al.Semiconductor science and technology. 1997, Vol 12, Num 7, pp 933-937, issn 0268-1242Article

Concentration of atomic defects in ordered compounds : Canonical and grandcanonical formalismSCHOTT, V; FÄHNLE, M.Physica status solidi. B. Basic research. 1997, Vol 204, Num 2, pp 617-624, issn 0370-1972Article

Atomistic mechanisms of fatigue in nanocrystalline metalsFARKAS, D; WILLEMANN, M; HYDE, B et al.Physical review letters. 2005, Vol 94, Num 16, pp 165502.1-165502.4, issn 0031-9007Article

Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasmaNIIKURA, Chisato; KONDO, Michio; MATSUDA, Akihisa et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 42-46, issn 0022-3093, 5 p.Conference Paper

Percolation study of defect tolerance in missing-crossbar networksZWOLAK, Michael P; ZALLEN, Richard; DI VENTRA, Massimiliano et al.Solid state communications. 2002, Vol 124, Num 5-6, pp 167-170, issn 0038-1098, 4 p.Article

A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in siliconVANHELLEMONT, Jan; DE GRYSE, Olivier; CLAUWS, Paul et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 10, pp 2341-2346, issn 1862-6300, 6 p.Article

Anderson localization in carbon nanotubes : Defect density and temperature effectsBIEL, Blanca; GARCIA-VIDAL, F. J; RUBIO, Angel et al.Physical review letters. 2005, Vol 95, Num 26, pp 266801.1-266801.4, issn 0031-9007Article